NCE NCE65TF099D
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE65TF099D
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 650V 38A TO-263
Description:
N-Channel 650V 38A 322W Surface Mount TO-263
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
38A
RDS(on):
89mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Input Capacitance(Ciss):
2.8nF
Output Capacitance(Coss):
150pF
Pd - Power Dissipation:
322W
Gate Charge(Qg):
45nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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Manufacturer: NCE