NCE NCE60P25K
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE60P25K
Package:
TO-252-2L
Customer #:
Key Attributes:
MOSFET P-CH 60V 25A TO-252-2L
Description:
P-Channel 60V 25A 90W Surface Mount TO-252-2L
Products Specifications
Manufacturer:
Package:
TO-252-2L
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
25A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
3.5V@0.25mA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 P-Channel
Output Capacitance(Coss):
391pF
Input Capacitance(Ciss):
3.43nF
Pd - Power Dissipation:
90W
Gate Charge(Qg):
46nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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