LONTEN LDD60U10W4
Manufacturer:
LONTEN
Asian Brands
Mfr. Part #:
LDD60U10W4
Package:
TO-220-2
Customer #:
Key Attributes:
Diode 600V 10A TO-220-2
Description:
150A 20ns Independent 600V 1.8V@10A 10A TO-220-2 Single Diodes RoHS
Datasheet:
LONTEN LDD60U10W4
Products Specifications
Manufacturer:
Package:
TO-220-2
Non-Repetitive Peak Forward Surge Current:
150A
Reverse Leakage Current (Ir):
50uA@600V
Reverse Recovery Time (trr):
20ns
Operating Junction Temperature Range:
-50℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
600V
Pd - Power Dissipation:
83W
Voltage - Forward(Vf@If):
1.8V@10A
Current - Rectified:
10A
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
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LONTEN
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Lonten Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development, and has established a domestic first-class R&D center and application testing laboratory. The company has passed ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application.
The company has established a domestic first-class R&D center and laboratory. The company's super junction power FET (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other products have the advantages of high energy efficiency, high reliability and high cost performance. It has been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; in new energy vehicle char
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