JIAENSEMI JNG25N120AI
Manufacturer:
JIAENSEMI
Asian Brands
Mfr. Part #:
JNG25N120AI
Package:
TO-3P
Customer #:
Description:
210W 1.2kV NPT (Non-Punch Through) TO-3P Single IGBTs RoHS
Datasheet:
JIAENSEMI JNG25N120AI
Products Specifications
Manufacturer:
Package:
TO-3P
Pd - Power Dissipation:
210W
Td(off):
290ns
Td(on):
22ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
150pF
Input Capacitance(Cies):
1.25nF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.5V@0.25mA
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
210pF
Reverse Recovery Time(trr):
190ns
Switching Energy(Eoff):
1.4mJ
Turn-On Energy (Eon):
2.2mJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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