HXY MOSFET IXYP15N65C3D1M-HXY
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
IXYP15N65C3D1M-HXY
Package:
TO-220F
Customer #:
Description:
250W 650V TO-220F Single IGBTs RoHS
Datasheet:
HXY MOSFET IXYP15N65C3D1M-HXY
Products Specifications
Manufacturer:
Package:
TO-220F
Td(off):
156ns
Pd - Power Dissipation:
250W
Td(on):
46ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
11pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6.4V@400uA
Gate Charge(Qg):
51nC
Operating Temperature:
-40℃~+175℃
Pulsed Current- Forward(Ifm):
150A
Output Capacitance(Coes):
34pF
Reverse Recovery Time(trr):
159ns
Switching Energy(Eoff):
190uJ
Turn-On Energy (Eon):
400uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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