HXY MOSFET HC1D100065H
Manufacturer:
HXY MOSFET
Mfr. Part #:
HC1D100065H
Package:
TO-247-2L
Customer #:
Description:
SiC Diode 650V 205A Through Hole TO-247-2L
Datasheet:
HXY MOSFET HC1D100065H
Products Specifications
Manufacturer:
Package:
TO-247-2L
Non-Repetitive Peak Forward Surge Current:
750A
Reverse Leakage Current (Ir):
100uA@650V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.3V@100A
Current - Rectified:
205A
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
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HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
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