HXY MOSFET HC4D02120E
Manufacturer:
HXY MOSFET
Mfr. Part #:
HC4D02120E
Package:
TO-252-2L(DPAK)
Customer #:
Description:
SiC Diode 1200V 10A Surface Mount TO-252-2L(DPAK)
Datasheet:
HXY MOSFET HC4D02120E
Products Specifications
Manufacturer:
Package:
TO-252-2L(DPAK)
Non-Repetitive Peak Forward Surge Current:
24A
Reverse Leakage Current (Ir):
2uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.75V@2A
Current - Rectified:
10A
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
Recommended Products