HUAYI HYG050N13NS1B6
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG050N13NS1B6
Package:
TO-263-6
Customer #:
Key Attributes:
MOSFET N-CH 135V 200A TO-263-6
Description:
N-Channel 135V 200A 375W Surface Mount TO-263-6
Datasheet:
HUAYI HYG050N13NS1B6
Products Specifications
Manufacturer:
Package:
TO-263-6
Drain to Source Voltage:
135V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+175℃
RDS(on):
5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
181pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
11.662nF
Pd - Power Dissipation:
375W
Gate Charge(Qg):
165nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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