HUAYI HYG064N08NA1B
Manufacturer:
HUAYI
Asian Brands
Mfr. Part #:
HYG064N08NA1B
Package:
TO-263-2
Customer #:
Key Attributes:
MOSFET N-CH 80V 120A TO-263-2
Description:
N-Channel 80V 120A 208W Surface Mount TO-263-2
Datasheet:
HUAYI HYG064N08NA1B
Products Specifications
Manufacturer:
Package:
TO-263-2
Drain to Source Voltage:
80V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Number:
1 N-channel
Output Capacitance(Coss):
460pF
Input Capacitance(Ciss):
3.08nF
Pd - Power Dissipation:
208W
Gate Charge(Qg):
65nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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HUAYI
323 Products
HUAYI, also known as Hymexa, was established in 2017 and is a high-tech enterprise under the Huatian Electronics Group, focusing on the research, design, packaging, testing, and sales of semiconductor power devices. Its main product lines include MOSFET, Trench MOSFET, and SGT MOSFET.
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