GOFORD GT60N12T
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT60N12T
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 120V 6A TO-220
Description:
N-Channel 120V 6A 140W Through Hole TO-220
Datasheet:
GOFORD GT60N12T
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
120V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
8.3pF
Number:
1 N-channel
Output Capacitance(Coss):
356.1pF
Input Capacitance(Ciss):
2.8097nF
Pd - Power Dissipation:
140W
Gate Charge(Qg):
39.6nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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