GOFORD 5N60F
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
5N60F
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 600V 4A TO-220F
Description:
N-Channel 600V 4A 44.6W Through Hole TO-220F
Datasheet:
GOFORD 5N60F
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
600V
Current - Continuous Drain(Id):
4A
RDS(on):
1.95Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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