GOFORD G65P06F
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
G65P06F
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET P-CH 60V 65A TO-220F
Description:
P-Channel 60V 65A 39W Through Hole TO-220F
Datasheet:
GOFORD G65P06F
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
65A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.6V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF@25V
Number:
1 P-Channel
Input Capacitance(Ciss):
6.477nF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
75nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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