GOFORD GT105N10F
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT105N10F
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET N-CH 100V 33A TO-220F
Description:
N-Channel 100V 33A 20.8W Through Hole TO-220F
Datasheet:
GOFORD GT105N10F
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
33A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
13pF@50V
Number:
1 N-channel
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
1.587nF
Pd - Power Dissipation:
20.8W
Gate Charge(Qg):
54nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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