GOFORD GT088N06T
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT088N06T
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 60V 60A TO-220
Description:
N-Channel 60V 60A 75W Through Hole TO-220
Datasheet:
GOFORD GT088N06T
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V,14A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
297pF
Input Capacitance(Ciss):
1.62nF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
24nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
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Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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