GOFORD GT110N06D3
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT110N06D3
Package:
DFN3X3-8L
Customer #:
Key Attributes:
MOSFET N-CH 60V 35A DFN3X3-8L
Description:
N-Channel 60V 35A 25W Surface Mount DFN3x3-8L
Datasheet:
GOFORD GT110N06D3
Products Specifications
Manufacturer:
Package:
DFN3X3-8L
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+150℃
RDS(on):
14mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
22pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
295pF
Input Capacitance(Ciss):
1.059nF
Pd - Power Dissipation:
25W
Gate Charge(Qg):
24nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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