GOFORD GT025N06AM-B
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT025N06AM-B
Package:
TO-263
Customer #:
Key Attributes:
MOSFET N-CH 60V 170A TO-263
Description:
N-Channel 60V 170A 215W Surface Mount TO-263
Datasheet:
GOFORD GT025N06AM-B
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
170A
RDS(on):
3.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
78pF
Pd - Power Dissipation:
215W
Output Capacitance(Coss):
1.347nF
Input Capacitance(Ciss):
5.119nF
Gate Charge(Qg):
70nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
Recommended Products
GT011N03TLE
30V 250A 1.2mΩ@10V 2.5V@250uA 1 N-channel 300W TOLL-8L Single FETs, MOSFETs RoHS
Manufacturer: GOFORD