GOFORD GT250P10T
Manufacturer:
GOFORD
Asian Brands
Mfr. Part #:
GT250P10T
Package:
TO-220
Customer #:
Key Attributes:
MOSFET P-CH 100V 56A TO-220
Description:
P-Channel 100V 56A 173.6W Through Hole TO-220
Datasheet:
GOFORD GT250P10T
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
56A
Operating Temperature -:
-55℃~+150℃
RDS(on):
30mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 P-Channel
Output Capacitance(Coss):
333pF
Input Capacitance(Ciss):
4.059nF
Pd - Power Dissipation:
173.6W
Gate Charge(Qg):
73nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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GOFORD
666 Products
Wuxi Goford Semiconductor Co., Ltd.
(hereinafter referred to as "GOFORD") is a high-tech enterprise dedicated to the research and development and sales of power device products. The company focuses on high energy efficiency, high mobility and high reliability, and provides the market with highly advantageous products, including MOSFET, SiC MOSFET, IGBT, and GaN MOSFET. These products are widely used in automotive, consumer electronics, industry, communications and other fields. GOFORD promises to always provide the most reliable and cost-effective products to meet the diverse product needs of customers.
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