ANHI ASU65R550E
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASU65R550E
Package:
TO-251
Customer #:
Key Attributes:
MOSFET N-CH 655V 8A TO-251
Description:
N-Channel 655V 8A 63W Through Hole TO-251
Datasheet:
ANHI ASU65R550E
Products Specifications
Manufacturer:
Package:
TO-251
Drain to Source Voltage:
655V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.55pF
Number:
1 N-channel
Output Capacitance(Coss):
76pF
Input Capacitance(Ciss):
599pF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
8nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 75 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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