ANHI ASW65R110E
Manufacturer:
ANHI
Asian Brands
Mfr. Part #:
ASW65R110E
Package:
TO-247
Customer #:
Key Attributes:
MOSFET N-CH 655V 30A TO-247
Description:
N-Channel 655V 30A 277.8W Through Hole TO-247
Datasheet:
ANHI ASW65R110E
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
655V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+100℃
RDS(on):
110mΩ
Gate Threshold Voltage (Vgs(th)):
4.2V
Reverse Transfer Capacitance (Crss@Vds):
6.75pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
2.497nF@50V
Pd - Power Dissipation:
277.8W
Gate Charge(Qg):
52nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 25 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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ANHI
99 Products
ANHI, established in 2019 with a 180 million RMB investment from the Jinan municipal government, focuses on the design, manufacturing, process development, sales, and technical services of power device products and modules. The main products include MOSFETs, super junction MOSFETs, IGBTs, and SiC MOSFETs.
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