AGMSEMI AGM306C
Manufacturer:
AGMSEMI
Asian Brands
Mfr. Part #:
AGM306C
Package:
TO-220
Customer #:
Key Attributes:
MOSFET N-CH 30V 60A TO-220
Description:
N-Channel 30V 60A 51W Through Hole TO-220
Datasheet:
AGMSEMI AGM306C
Products Specifications
Manufacturer:
Package:
TO-220
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
2.1V
Reverse Transfer Capacitance (Crss@Vds):
110pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.07nF@15V
Pd - Power Dissipation:
51W
Gate Charge(Qg):
34nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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AGMSEMI
609 Products
AGMSEMI Core Control Electronic Technology Co., Ltd.
(hereinafter referred to as "AGM-Semi") is a leading designer and marketer of modern high-power semiconductor devices in China, specializing in the design, production, and marketing of a wide range of high-power semiconductor devices and power-integrated devices. AGM-Semi is based on independent innovation, owns independent intellectual property rights, and is committed to the "AGM-Semi" independent product brand. At present, the company specializes in the R&D, design, production, testing, quality assessment, sales, and service of super-junction MOSFETs, NPT-IGBT, and trench-type high-power MOS devices. AGM-Semi has established design and operation centers, sales companies, and outsourcing chip flow bases, finished product packaging bases, and finished product testing bases in mainland China and Hong Kong respectively, and has a perfect quality control assurance system to ensure the consistency and stability of product quality.
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