AGMSEMI AGM035N10H
Manufacturer:
AGMSEMI
Asian Brands
Mfr. Part #:
AGM035N10H
Package:
TO-263
Customer #:
Description:
100V 150A 3.5mΩ@4.5V,7A 2.5V 1 N-channel 208W TO-263 Single FETs, MOSFETs RoHS
Datasheet:
AGMSEMI AGM035N10H
Products Specifications
Manufacturer:
Package:
TO-263
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
150A
RDS(on):
3.5mΩ@4.5V,7A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
27pF@50V
Number:
1 N-channel
Pd - Power Dissipation:
208W
Input Capacitance(Ciss):
3.5nF@50V
Gate Charge(Qg):
67.2nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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AGMSEMI
609 Products
AGMSEMI Core Control Electronic Technology Co., Ltd.
(hereinafter referred to as "AGM-Semi") is a leading designer and marketer of modern high-power semiconductor devices in China, specializing in the design, production, and marketing of a wide range of high-power semiconductor devices and power-integrated devices. AGM-Semi is based on independent innovation, owns independent intellectual property rights, and is committed to the "AGM-Semi" independent product brand. At present, the company specializes in the R&D, design, production, testing, quality assessment, sales, and service of super-junction MOSFETs, NPT-IGBT, and trench-type high-power MOS devices. AGM-Semi has established design and operation centers, sales companies, and outsourcing chip flow bases, finished product packaging bases, and finished product testing bases in mainland China and Hong Kong respectively, and has a perfect quality control assurance system to ensure the consistency and stability of product quality.
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