Single IGBTs
Results:
1
Manufacturer
FUXINSEMI
Package
TO-247-3
Packaging
Pulsed Current- Forward(Ifm)
60A
Switching Energy(Eoff)
1.02mJ
Pd - Power Dissipation
333W
Reverse Recovery Time(trr)
-
IGBT Type
-
Operating Temperature
-40℃~+175℃
Turn-On Energy (Eon)
1.02mJ
Gate-Emitter Threshold Voltage (Vge(th)@Ic)
4.8V@1mA
Input Capacitance(Cies)
1.781nF
Reverse Transfer Capacitance (Cres)
57pF
Td(off)
204ns
Td(on)
-
Collector-Emitter Breakdown Voltage (Vces)
1.35kV
Gate Charge(Qg)
175nC@15V
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|
Mpn |
Manufacturer |
Quantity |
Description |
Package |
Packaging |
Date Code |
Pulsed Current- Forward(Ifm) |
Switching Energy(Eoff) |
Pd - Power Dissipation |
Reverse Recovery Time(trr) |
IGBT Type |
Operating Temperature |
Turn-On Energy (Eon) |
Gate-Emitter Threshold Voltage (Vge(th)@Ic) |
Input Capacitance(Cies) |
Reverse Transfer Capacitance (Cres) |
Td(off) |
Td(on) |
Collector-Emitter Breakdown Voltage (Vces) |
Gate Charge(Qg) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
Full Reel: |
IGBT 1.35kV 40A 333W Through Hole TO-247-3 |
TO-247-3 |
- |
60A | 1.02mJ | 333W | - | - | -40℃~+175℃ | 1.02mJ | 4.8V@1mA | 1.781nF | 57pF | 204ns | - | 1.35kV | 175nC@15V |
