HUASHUO HSBG2103
Manufacturer:
HUASHUO
Asian Brands
Mfr. Part #:
HSBG2103
Package:
DFN1006-3
Customer #:
Key Attributes:
MOSFET P-CH 20V 650mA DFN1006-3
Description:
P-Channel 20V 650mA 150mW Surface Mount DFN1006-3
Products Specifications
Manufacturer:
Package:
DFN1006-3
Drain to Source Voltage:
20V
Operating Temperature -:
-55℃~+150℃
Type:
P-Channel
Ciss-Input Capacitance:
120pF
Reverse Transfer Capacitance (Crss@Vds):
11pF
RDS(on):
520mΩ@4.5V
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
8nC@4.5V
Current - Continuous Drain(Id):
650mA
Gate Threshold Voltage (Vgs(th)):
1V
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
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HUASHUO
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Huashuo Semiconductor Co., Ltd.
(hereinafter referred to as "HUASHUO") is a semiconductor device company focusing on independent research and development, sales and service. HUASHUO adheres to the principle of "developing new technologies, manufacturing new products, and creating new solutions." It has the design capabilities of a full range of medium/low voltage Power MOSFET discrete devices and special process ICs. The products are widely used in computers, automotive electronics, industrial electronics, consumer electronics, communication power supplies, lithium batteries and other new energy industries.
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