TI CSD19536KTTT
Manufacturer:
TI
Mfr. Part #:
CSD19536KTTT
Package:
TO-263-3
Customer #:
Key Attributes:
100V,2mΩ N-Channel MOSFET
Description:
100V 272A 2.4mΩ@10V 3.2V@250uA 1 N-channel 375W TO-263-3 Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
TO-263-3
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
272A
Operating Temperature -:
-55℃~+175℃
RDS(on):
2.4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
61pF
Number:
1 N-channel
Output Capacitance(Coss):
2.37nF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
12nF
Gate Charge(Qg):
153nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
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Texas Instruments Incorporated designs and manufactures analog technologies, digital signal processing (DSP) and microcontroller (MCU) semiconductors. TI is a leader in semiconductor solutions for analog and digital embedded and applications processing. A global semiconductor company, TI innovates through design, sales and manufacturing operations in more than 30 countries.
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