TI RF1S640SM

Name: TI RF1S640SM
Brand: TI

Manufacturer: TI

Mfr. Part #: RF1S640SM

Package: TO-263AB

Customer #:

Description: 200V 18A 180mΩ@10V 4V@250uA 1 N-channel 125W TO-263AB Single FETs, MOSFETs

Products Specifications

Category:

Discrete Semiconductors/FETs, MOSFETs/Single FETs, MOSFETs

Manufacturer:

Package:

TO-263AB

Drain to Source Voltage:

200V

Current - Continuous Drain(Id):

18A

RDS(on):

180mΩ@10V

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

4V@250uA

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

100pF

Number:

1 N-channel

Output Capacitance(Coss):

400pF

Pd - Power Dissipation:

125W

Input Capacitance(Ciss):

1.275nF

Gate Charge(Qg):

64nC@10V

Additional Information

Type	Details
Minimum	1
Multiple	1
Standard Packaging	1
Sales Unit	Piece

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Texas Instruments Incorporated designs and manufactures analog technologies, digital signal processing (DSP) and microcontroller (MCU) semiconductors. TI is a leader in semiconductor solutions for analog and digital embedded and applications processing. A global semiconductor company, TI innovates through design, sales and manufacturing operations in more than 30 countries.

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