NXP MMZ09332BT1
Manufacturer:
NXP
Mfr. Part #:
MMZ09332BT1
Package:
QFN-12-EP(3x3)
Customer #:
Key Attributes:
Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier
Description:
3V~5V 130MHz~1GHz 30.5dB 32.8dBm 108mA QFN-12-EP(3x3) RF Amplifiers RoHS
Products Specifications
Category:
Manufacturer:
Package:
QFN-12-EP(3x3)
Voltage - Supply:
3V~5V
Frequency Range:
130MHz~1GHz
Gain:
30.5dB
IP3:
43dBm
P1dB:
32.8dBm
Current - Supply:
108mA
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1000 |
| Sales Unit | Piece |
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NXP
6895 Products
NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security and privacy and smart connected solutions markets.
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