NXP BSH111,215
Manufacturer:
NXP
Mfr. Part #:
BSH111,215
Package:
-
Customer #:
Description:
55V 335mA 8Ω@1.8V 1.3V@1000uA 830mW Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
-
Drain to Source Voltage:
55V
Current - Continuous Drain(Id):
335mA
RDS(on):
8Ω@1.8V
Gate Threshold Voltage (Vgs(th)):
1.3V@1000uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
830mW
Output Capacitance(Coss):
30pF
Gate Charge(Qg):
1nC@8V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
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NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security and privacy and smart connected solutions markets.
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