NXP SI2304DS,215
Manufacturer:
NXP
Mfr. Part #:
SI2304DS,215
Package:
-
Customer #:
Description:
30V 1.7A 190mΩ@4.5V 2V@1mA 830mW Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
-
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
1.7A
RDS(on):
190mΩ@4.5V
Operating Temperature -:
-65℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
56pF
Pd - Power Dissipation:
830mW
Input Capacitance(Ciss):
195pF
Output Capacitance(Coss):
78pF
Gate Charge(Qg):
4.6nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
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NXP Semiconductors enables secure connections and infrastructure for a smarter world, advancing solutions that make lives easier, better and safer. As the world leader in secure connectivity solutions for embedded applications, NXP is driving innovation in the secure connected vehicle, end-to-end security and privacy and smart connected solutions markets.
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