Nisshinbo Micro Devices Inc. NJG1175KG1-TE3
Manufacturer:
Nisshinbo Micro Devices Inc.
Mfr. Part #:
NJG1175KG1-TE3
Package:
DFN-6(1.6x1.6)
Customer #:
Key Attributes:
5 GHz Low Noise Amplifier with Bypass Function
Description:
16dB 2.5V~5.5V 4.9GHz~5.925GHz 0.95dB 13mA DFN-6(1.6x1.6) RF Amplifiers RoHS
Products Specifications
Category:
Manufacturer:
Package:
DFN-6(1.6x1.6)
Gain:
16dB
Voltage - Supply:
2.5V~5.5V
Frequency Range:
4.9GHz~5.925GHz
Noise Figure:
0.95dB
Current - Supply:
13mA
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
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Nisshinbo Micro Devices Inc.
2009 Products
Nisshinbo Micro Devices Inc. was established in 1959 and is headquartered in Tokyo, Japan. The company primarily produces semiconductor integrated circuits, discrete semiconductors, optoelectronic semiconductors, and microwave products, including satellite communication components, radio sensors, and radar components.
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