Wuxi China Resources Huajing Microelectronics CS4N80A3HD-G
Manufacturer:
Wuxi China Resources Huajing Microelectronics
Asian Brands
Mfr. Part #:
CS4N80A3HD-G
Package:
TO-251
Customer #:
Key Attributes:
MOSFET N-CH 800V 4A TO-251
Description:
N-Channel 800V 4A 100W Through Hole TO-251
Products Specifications
Manufacturer:
Package:
TO-251
Drain to Source Voltage:
800V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
82pF
Input Capacitance(Ciss):
865pF
Pd - Power Dissipation:
100W
Gate Charge(Qg):
25nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 75 |
| Sales Unit | Piece |
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Wuxi China Resources Huajing Microelectronics
131 Products
WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD., which belongs to China Resources Microelectronics Limited, is responsible for the power semiconductor device business and producing the domestic famous brand "HUAJING" discrete device. It is honored as the state key high-tech enterprises and served as one of the vice president members in China Semiconductor Industry Association.
With a strong technical force, HUAJING was founded in 2000, and is committed to becoming a national influenced leading enterprises under the pattern of Pure state investment, self-arrangement and market operation by focusing on the semiconductor field, in which actively producing products such as energy gap semiconductor, IPM and so on.
HUAJING is facing to the domestic consumer and industrial electronics market, with its power devices as the core products, bipolar power transistors, MOSFET, IGBT and specialty diodes as the leading products. Striving to create an energy-saving, smart life for people, its
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