TOSHIBA HN1B04FE-GR,LF
Manufacturer:
TOSHIBA
Mfr. Part #:
HN1B04FE-GR,LF
Package:
SOT-666-6
Customer #:
Key Attributes:
TRANS NPN+PNP 50V 150mA SOT-666-6
Description:
Bipolar (BJT) Transistor NPN+PNP 50V 150mA 80MHz 100mW Surface Mount SOT-666-6
Datasheet:
TOSHIBA HN1B04FE-GR,LF
Products Specifications
Manufacturer:
Package:
SOT-666-6
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
120@2mA,6V
Transition frequency(fT):
80MHz
Number:
1 NPN + 1 PNP
Vce Saturation(VCE(sat)):
100mV
type:
NPN+PNP
Pd - Power Dissipation:
100mW
Current - Collector(Ic):
150mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 4000 |
| Sales Unit | Piece |
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TOSHIBA
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Toshiba Semiconductor and Storage Products, United States is an independent operating company owned byToshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer. Toshiba is a global leader in the design and manufacture of high-quality Flash memory-based storage solutions, discrete devices, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers (MCUs), and wireless components.Toshiba products are ideal for automotive, imaging, LED lighting, mobile, multimedia, and wireless applications.
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