Tokmas CID9N65E3
Manufacturer:
Tokmas
Asian Brands
Mfr. Part #:
CID9N65E3
Package:
TO-252-3L
Customer #:
Key Attributes:
GaN Enhancement-mode Power Transistor
Description:
650V 4.8A 334mΩ 1.5V 39W TO-252-3L Single FETs, MOSFETs RoHS
Datasheet:
Tokmas CID9N65E3
Products Specifications
Manufacturer:
Package:
TO-252-3L
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
4.8A
RDS(on):
334mΩ
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
0.3pF
Input Capacitance(Ciss):
42pF
Pd - Power Dissipation:
39W
Output Capacitance(Coss):
13pF
Gate Charge(Qg):
1.2nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
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Tokmas
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Guangdong Tokmas Electronics Co., Ltd.
(hereinafter referred to as "TOKMAS") is a design company that utilizes technology from the United States. The processes of wafer taping and packaging are all carried out by foundries. TOKMAS specializes in a range of products, including diodes, MOSFETs, IGBTs, thyristors, amplifiers, isolators, optocouplers, CAN chips, Hall current sensors, gate driver chips, and gallium nitride transistors. These products find applications in various fields such as new energy, industrial systems, home appliances, and consumer electronics.
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