ST STGW30M65DF2
Manufacturer:
ST
Mfr. Part #:
STGW30M65DF2
Package:
TO-247
Customer #:
Key Attributes:
Trench gate field-stop IGBTs, M series 650 V, 30 A low-loss
Description:
258W 650V TO-247 Single IGBTs RoHS
Datasheet:
ST STGW30M65DF2
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
258W
Td(off):
115ns
Operating Temperature:
-55℃~+175℃
Td(on):
31.6ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
46pF
Input Capacitance(Cies):
2.49nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@500uA
Gate Charge(Qg):
80nC@15V
Pulsed Current- Forward(Ifm):
120A
Output Capacitance(Coes):
143pF
Reverse Recovery Time(trr):
140ns
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 600 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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