ST STGWT30HP65FB
Manufacturer:
ST
Mfr. Part #:
STGWT30HP65FB
Package:
TO-3P
Customer #:
Key Attributes:
Trench gate field-stop 650 V, 30 A high speed HB series IGBT
Description:
260W 650V TO-3P Single IGBTs RoHS
Datasheet:
ST STGWT30HP65FB
Products Specifications
Manufacturer:
Package:
TO-3P
Td(off):
146ns
Pd - Power Dissipation:
260W
Operating Temperature:
-55℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
76pF
Input Capacitance(Cies):
3.659nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Gate Charge(Qg):
149nC@15V
Pulsed Current- Forward(Ifm):
10A
Output Capacitance(Coes):
101pF
Reverse Recovery Time(trr):
140ns
Switching Energy(Eoff):
293uJ
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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