ST SCT070HU120G3AG
Manufacturer:
ST
Mfr. Part #:
SCT070HU120G3AG
Package:
HU3PAK
Customer #:
Key Attributes:
Automotive-grade silicon carbide Power MOSFET 1200V, 63 mΩ typ., 30 A
Description:
1.2kV 30A 87mΩ 4.2V 1 N-channel 223W HU3PAK Single FETs, MOSFETs RoHS
Datasheet:
ST SCT070HU120G3AG
Products Specifications
Manufacturer:
Package:
HU3PAK
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+175℃
RDS(on):
87mΩ
Gate Threshold Voltage (Vgs(th)):
4.2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
900pF
Pd - Power Dissipation:
223W
Gate Charge(Qg):
37nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 600 |
| Sales Unit | Piece |
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STMicroelectronics is a global independent semiconductor company and a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio, and strategic partners positions, STMicroelectronics is at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.
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