Shanghai Prisemi Elec PNM3FD201E0
Manufacturer:
Shanghai Prisemi Elec
Asian Brands
Mfr. Part #:
PNM3FD201E0
Package:
DFN1006-3L
Customer #:
Key Attributes:
N-Channel MOSFET
Description:
20V 300mA 400mΩ@4.0V 1.1V@250uA 1 N-channel 140mW DFN1006-3L Single FETs, MOSFETs RoHS
Datasheet:
Shanghai Prisemi Elec PNM3FD201E0
Products Specifications
Manufacturer:
Package:
DFN1006-3L
Drain to Source Voltage:
20V
Current - Continuous Drain(Id):
300mA
RDS(on):
400mΩ@4.0V
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
13pF
Number:
1 N-channel
Output Capacitance(Coss):
13pF
Input Capacitance(Ciss):
30pF
Pd - Power Dissipation:
140mW
Gate Charge(Qg):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 10 |
| Multiple | 10 |
| Standard Packaging | 10000 |
| Sales Unit | Piece |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
Shanghai Prisemi Elec
307 Products
Shanghai Prisemi Electronics Co.,Ltd, is a high-tech electronics enterprise dedicated to integrated circuit R&D, production and sales, located in Zhangjiang Hi-tech Park, Shanghai, China.
Prisemi actively committed to high level integrated circuit technology research for many years, and the growth of scientific input has keep growing more than 70% every year. Prisemi has established the first-class laboratory in China, and undertaken a number of national research projects. In the discrete devices (TVS, MOSFET, TSS, Transistor, Diodes) and professional integrated circuit (ASIC) field, Prisemi has constructed a strategic partnership with many well-known international enterprises.
Recommended Products
PNMT6N1-LB
40V 180mA 4Ω@4.5V,0.2A 1.5V@250uA 150mW UDFN-6(2x2) Single FETs, MOSFETs RoHS
Manufacturer: Shanghai Prisemi Elec
PNMT6N1
40V 180mA 1 N-channel 150mW UDFN-6(2x2) Single FETs, MOSFETs RoHS
Manufacturer: Shanghai Prisemi Elec