Samwin SWI8N65DB
Manufacturer:
Samwin
Asian Brands
Mfr. Part #:
SWI8N65DB
Package:
TO-251
Customer #:
Key Attributes:
MOSFET 650V 8A TO-251
Description:
650V 8A 178.6W Through Hole TO-251
Datasheet:
Samwin SWI8N65DB
Products Specifications
Manufacturer:
Package:
TO-251
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1Ω@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
13pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
178.6W
Input Capacitance(Ciss):
1.77nF@25V
Gate Charge(Qg):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 80 |
| Sales Unit | Piece |
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Samwin
157 Products
Samwin electronic technology co., LTD. (Samwin technology for short) was founded in 2008, headquartered in Xi 'an high-tech zone Huanpu science and technology industrial park, with a research and development center in Shanghai, Shenzhen with a sales and service center, but also with a Taiwan office and Hong Kong import and export business center. Is a collection of research and development, production and sales as one of the high-tech enterprises, products include: medium and high power field effect tube (MOSFET, low to high voltage full series products), insulated gate bipolar transistor (IGBT), diode (including rapid recovery diode and Schottky diode), bridge stack and power management IC, etc..
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