RENESAS RJP60F5DPK-01#T0
Manufacturer:
RENESAS
Mfr. Part #:
RJP60F5DPK-01#T0
Package:
TO-3P
Customer #:
Description:
260.4W 600V TO-3P Single IGBTs RoHS
Datasheet:
RENESAS RJP60F5DPK-01#T0
Products Specifications
Manufacturer:
Package:
TO-3P
Td(off):
90ns
Pd - Power Dissipation:
260.4W
Td(on):
53ns
Collector-Emitter Breakdown Voltage (Vces):
600V
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.8V@15V,40A
Operating Temperature:
-
Gate Charge(Qg):
74nC
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 1 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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RENESAS
21475 Products
Renesas Electronics America designs and manufactures highly integrated semiconductor system solutions for automotive, mobile and PC/AV markets. Established on April 1, 2003, as a joint venture between Hitachi, Ltd. and Mitsubishi Electric Corporation and headquartered in Tokyo, Japan, Renesas is one of the largest semiconductor companies in the world and the world-leading microcontroller supplier globally. Besides microcontrollers, Renesas offers system-on-chip devices, smart card ICs, mixed-signal products, flash memories, SRAMs and more.
For all your power and precision analog needs to go with our embedded solutions, please visit the newest addition to the Renesas family, Intersil Corporation.
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