onsemi HGTP5N120CN
Manufacturer:
onsemi
Mfr. Part #:
HGTP5N120CN
Package:
TO-220AB
Customer #:
Description:
167W 1.2kV NPT (Non-Punch Through) TO-220AB Single IGBTs
Datasheet:
onsemi HGTP5N120CN
Products Specifications
Manufacturer:
Package:
TO-220AB
Pd - Power Dissipation:
167W
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Operating Temperature:
-55℃~+150℃@(Tj)
Switching Energy(Eoff):
-
Turn-On Energy (Eon):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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onsemi
19033 Products
onsemi, founded in 1999, has become one of the world's leading semiconductor solution providers through acquisitions and organic growth. It primarily produces power management, analog signal processing, logic ICs, discrete components, and sensors.
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