NCE NCEP3090GU
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP3090GU
Package:
DFN-8(4.9x5.8)
Customer #:
Description:
30V 90A 3.1mΩ@4.5V,20A 1V 1 N-channel 70W DFN-8(4.9x5.8) Single FETs, MOSFETs RoHS
Datasheet:
NCE NCEP3090GU
Products Specifications
Manufacturer:
Package:
DFN-8(4.9x5.8)
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.1mΩ@4.5V,20A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
15.5pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.1nF@15V
Pd - Power Dissipation:
70W
Gate Charge(Qg):
34.8nC@15V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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