NCE NCEP080N10F
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP080N10F
Package:
TO-220F
Customer #:
Key Attributes:
N-Channel, Current:45A, Voltage:100V
Description:
100V 45A 9mΩ@10V 4V@250uA 39W TO-220F Single FETs, MOSFETs RoHS
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
100V
Current - Continuous Drain(Id):
45A
RDS(on):
9mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Output Capacitance(Coss):
290pF
Pd - Power Dissipation:
39W
Input Capacitance(Ciss):
3.07nF@50V
Gate Charge(Qg):
53nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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