NCE NCE82H160
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE82H160
Package:
TO-220-3L
Customer #:
Key Attributes:
MOSFET N-CH 82V 160A TO-220-3L
Description:
N-Channel 82V 160A 285W Through Hole TO-220-3L
Datasheet:
NCE NCE82H160
Products Specifications
Manufacturer:
Package:
TO-220-3L
Drain to Source Voltage:
82V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
461pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
11.18nF@40V
Pd - Power Dissipation:
285W
Gate Charge(Qg):
201nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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