NCE NCE30H29D
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE30H29D
Package:
TO-263-2L
Customer #:
Key Attributes:
MOSFET N-CH 30V 290A TO-263-2L
Description:
N-Channel 30V 290A 270W Surface Mount TO-263-2L
Datasheet:
NCE NCE30H29D
Products Specifications
Manufacturer:
Package:
TO-263-2L
Drain to Source Voltage:
30V
Current - Continuous Drain(Id):
290A
Operating Temperature -:
-55℃~+175℃
RDS(on):
1.8mΩ@10V,160A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Output Capacitance(Coss):
1.672nF
Input Capacitance(Ciss):
13.873nF
Pd - Power Dissipation:
270W
Gate Charge(Qg):
-
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 800 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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