NCE NCE2333Y
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCE2333Y
Package:
SOT-23-3L
Customer #:
Key Attributes:
MOSFET P-CH 12V 6A SOT-23-3L
Description:
P-Channel 12V 6A 1.8W Surface Mount SOT-23-3L
Datasheet:
NCE NCE2333Y
Products Specifications
Manufacturer:
Package:
SOT-23-3L
Drain to Source Voltage:
12V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
45mΩ@2.5V,5A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.1nF@6V
Pd - Power Dissipation:
1.8W
Gate Charge(Qg):
11.5nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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