NCE NCEP025N60G
Manufacturer:
NCE
Asian Brands
Mfr. Part #:
NCEP025N60G
Package:
DFN5X6-8L
Customer #:
Key Attributes:
MOSFET N-CH 60V 165A DFN5X6-8L
Description:
N-Channel 60V 165A 145W Surface Mount DFN5X6-8L
Datasheet:
NCE NCEP025N60G
Products Specifications
Manufacturer:
Package:
DFN5X6-8L
Drain to Source Voltage:
60V
Current - Continuous Drain(Id):
165A
RDS(on):
2.2mΩ@10V,82.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 N-channel
Pd - Power Dissipation:
145W
Input Capacitance(Ciss):
4.85nF@30V
Gate Charge(Qg):
75.5nC@30V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 5000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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NCE
720 Products
As the leading designer and supplier of high-power semiconductor device in China, NCE Power is committed to designing, manufacturing and selling various high-power semiconductor devices and power integrated devices, aiming to be the most valuable supplier of power devices and service for customers in the world.
NCE Power is the first to provide Super Junction MOSFETs (SJ-MOSFET) in China, covering voltage from 600V to 900V, is the professional supplier with various kinds of Trench MOSFETs covering voltage from -150V to 250V;1350V (25A , 20A , 15A) IGBT by trench field stop technology are excellent in performance and reliability, applied in high end field.
Taking advantage of our device technology and process integration experience, we closely cooperate with the first-class 8” wafer fab foundry, package plant and testing plant, which ensures high product quality, extremely stable electric parameters, continuous and stable supply.
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