Minos MLG25N135RK
Manufacturer:
Minos
Asian Brands
Mfr. Part #:
MLG25N135RK
Package:
TO-247
Customer #:
Key Attributes:
IGBT 1.35kV 25A TO-247
Description:
IGBT NPT (Non-Punch Through) 1.35kV 25A 208W Through Hole TO-247
Products Specifications
Manufacturer:
Package:
TO-247
Pd - Power Dissipation:
208W
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
Input Capacitance(Cies):
2.37nF@30V
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.5V@1mA
Gate Charge(Qg):
142nC@25A,15V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
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Minos
380 Products
Shenzhen Minos Technology Co., Ltd.
(hereinafter referred to as "Minos") was established in 2010. It is a private enterprise focusing on the research and development, production and sales of semiconductor integrated circuits and power devices. The company's main products are VD MOSFET, TRENCH MOSFET, SGT MOSFET and IGBT. These products are widely used in electric vehicles, controllers, converters, LEDs, inverters, lithium battery protection and other fields. Minos has been committed to promoting its own brand "MINOS," casting and packaging in well-known domestic factories, and continuously expanding production lines to ensure stable product quality.
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