MASPOWER MS10N120HGC0
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MS10N120HGC0
Package:
TO-247
Customer #:
Key Attributes:
MOSFET 1.2kV 10A TO-247
Description:
1.2kV 10A 357W Through Hole TO-247
Datasheet:
MASPOWER MS10N120HGC0
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
10A
RDS(on):
2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
153pF
Pd - Power Dissipation:
357W
Input Capacitance(Ciss):
1.871nF
Gate Charge(Qg):
41nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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MASPOWER
255 Products
Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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