MASPOWER MS10N120HGT1
Manufacturer:
MASPOWER
Asian Brands
Mfr. Part #:
MS10N120HGT1
Package:
TO-220F
Customer #:
Key Attributes:
MOSFET 1.2kV 10A TO-220F
Description:
1.2kV 10A 67.9W Through Hole TO-220F
Datasheet:
MASPOWER MS10N120HGT1
Products Specifications
Manufacturer:
Package:
TO-220F
Drain to Source Voltage:
1.2kV
Current - Continuous Drain(Id):
10A
RDS(on):
2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
9pF
Output Capacitance(Coss):
153pF
Input Capacitance(Ciss):
1.871nF
Pd - Power Dissipation:
67.9W
Gate Charge(Qg):
41nC@10V
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 50 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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MASPOWER
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Shenzhen Maspower Semiconductor Co., Ltd.
(hereinafter referred to as "Maspower") was established in 2013 and has been focusing on the R&D, design and sales of semiconductor integrated circuits, power devices, MCUs and other products. It is headquartered in Shenzhen, China and has R&D centers in Shanghai, China. The company's main products are super junction MOSFET, low voltage MOSFET, high voltage MOSFET, NTP-IGBT, FS-IGBT, FRD, FRD MODULES, IC and MUC etc., which are widely used in welding equipment, industrial control, new energy, electric vehicle, power supply, medical equipment and other fields. Maspower carry out resource integration and innovative development in material preparation, chip design, manufacturing process, packaging and testing, drive applications, etc. on a global scale, covering all aspects of the industrial chain, and our products have reached a new level in the international field. Maspower mission is to optimize device performance and minimize system costs thro
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