HYNIX H5TC4G63EFR-RDAR
Manufacturer:
HYNIX
Mfr. Part #:
H5TC4G63EFR-RDAR
Package:
FBGA-96
Customer #:
Key Attributes:
4Gb Low Power Double Data Rate III (DDR3L) Synchronous DRAM
Description:
4Gbit 1.283V~1.45V 933MHz DDR3L SDRAM FBGA-96 Memory (ICs) RoHS
Datasheet:
HYNIX H5TC4G63EFR-RDAR
Products Specifications
Manufacturer:
Package:
FBGA-96
Refresh Current:
12mA
Memory Size:
4Gbit
Voltage - Supply:
1.283V~1.45V
Operating temperature:
0℃~+95℃
Clock Frequency:
933MHz
Memory Format:
DDR3L SDRAM
Current - Supply:
38mA
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2000 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | - |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
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HYNIX
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SK hynix has four production facilities in Wuxi and Chongqing, China as well as domestic business sites in Icheon and Cheongju. As a global company, SK hynix also operates sales subsidiaries in ten countries including the U.S., U.K., Germany, Singapore, Hong Kong, India, Japan, Taiwan and China, and four R&D corporate bodies in Italy, U.S., Taiwan and Belarus. Based on its 30-year-old know-how for production and operation of semiconductor business, SK hynix makes efforts to secure competitiveness in technology and costs and lead the global semiconductor market by conducting continuous R&D activities and investment.
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