HXY MOSFET HC3M0015065D
Manufacturer:
HXY MOSFET
Asian Brands
Mfr. Part #:
HC3M0015065D
Package:
TO-247
Customer #:
Key Attributes:
SICFET 650V 120A TO-247
Description:
650V 120A Through Hole TO-247
Datasheet:
HXY MOSFET HC3M0015065D
Products Specifications
Manufacturer:
Package:
TO-247
Drain to Source Voltage:
650V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-40℃~+175℃
RDS(on):
21mΩ
Gate Threshold Voltage (Vgs(th)):
3.6V
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
289pF
Pd - Power Dissipation:
416W
Input Capacitance(Ciss):
501pF
Gate Charge(Qg):
188nC
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 30 |
| Sales Unit | Piece |
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS |
|
| ECCN | - |
| CNHTS | - |
| USHTS | - |
| TARIC | - |
| CAHTS | - |
| BRHTS | - |
| INHTS | - |
| MXHTS | - |
About Product
Get Best Price
Inquiry
Negotiate
Payment
Shipping
HXY MOSFET
1800 Products
Shenzhen HuaXuanYang Electronics Co., Ltd.
(hereinafter referred to as "HXY MOSFET") is an innovative enterprise focusing on the research and development and sales of electronic components. It is committed to providing high-performance power device solutions for customers in the fields of digital products, consumer appliances, 5G communications, automotive new energy, medical equipment, etc. The company's product range covers a variety of power devices such as MOSFET, ESD, LDO, diodes, triodes, IGBTs and power chips. HXY MOSFET has a technical team with rich R&D experience, constantly innovating and improving product quality to ensure that customer needs are met; it adopts the ISO quality management system to ensure that products meet the highest standards.
Recommended Products